Cart (Loading....) | Create Account
Close category search window
 

Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Kwon, Ho Ki ; The University of Texas at Austin, Microelectronics Research Center, PRC/MER 1.606D-R9900, Austin, Texas 78712-1100 ; Eiting, C.J. ; Lambert, D.J.H. ; Shelton, B.S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1330767 

The optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures (SHs) grown by metalorganic chemical vapor deposition are investigated at low temperature using photoluminescence measurements. The formation of a two-dimensional electron gas at the heterojunction is verified by temperature-dependent Hall mobility and 300 K capacitance-voltage measurements. Radiative recombination is observed between the electrons in two-dimensional quantum states at the heterointerface and the holes in the flat-band region or bound to residual acceptors both in undoped and modulation-doped AlGaN/GaN SHs. These peaks disappear when the top AlGaN layer is removed by reactive ion etching. In addition, the photoluminescence results under different laser excitation intensity and lattice temperature are also described for undoped and modulation-doped AlGaN/GaN SHs with various Al compositions and growth interrupt times. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 4 )

Date of Publication:

Aug 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.