By Topic

Diffuse phase transitions, electrical conduction, and low temperature dielectric properties of sol–gel derived ferroelectric barium titanate thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Thomas, Reji ; 212 Earth and Engineering Science, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Varadan, V.K. ; Komarneni, S. ; Dube, D.C.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Ferroelectric thin films of barium titanate were fabricated by sol–gel technique on platinum substrates. The processing temperature was 700 °C. The films obtained with a thickness of 1.5 μm were dense, transparent, and showed ferroelectricity. Scanning electron microscopy and x-ray diffraction were used for studying the surface morphology and crystallographic structure of the film. Films in the metal–ferroelectric–metal configuration (MFM) were used for the electrical measurements. Dielectric constant and loss tangent were found to be 430 and 0.015, respectively, at 10 kHz under ambient conditions. The Є(T) curve shows broad peak centered around 120 °C as in the case of diffuse phase transition. The ac conductivity is proportional to ω0.9 in the low frequency region and ω1.8 in the high frequency region. The dc conductivity versus temperature curve showed a change in the slope around 125 °C, corresponding to the phase transition. To study the low temperature phase transitions, dielectric parameters on the films were measured to a temperature down to about 10 K. Remanent polarization (Pr) and coercive field (Ec) obtained from the hysteresis loop at room temperature are ∼2.0 μC/cm2 and ∼27 kV/cm, respectively. Capacitance–voltage studies performed on the MFM structures showed butterfly loop at 135 °C. © 2001 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:90 ,  Issue: 3 )