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Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175–250 °C), the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed. © 2001 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:90
,
Issue:
3
)
Date of Publication: Aug 2001
- Page(s):
- 1303 - 1306
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.1380414
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Aug 2001
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