By Topic

Integrated a ZnSe MSM Photodiode and an InGaP/GaAs HBT on a GaAs Substrate for High Sensitivity Short Wavelength Photodetector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ming Yao Chen ; Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung ; Chung Cheng Chang

A ZnSe MSM photodiode and an InGaP/GaAs HBT have been integrated successfully on a GaAs substrate by use of the selective-area epitaxy technique. The optical and electrical characterizations of the integrated photoreceiver as well as individual components used in this device structure were estimated. Photocurrent induced from the metal-semiconductor-metal (MSM) photodiode was amplified linearly by a common-emitter circuit composed of a HBT. A current amplification ratio and a voltage amplification sensitivity of the integrated device measured in this work were 20.8 and -29.6 mV/mu W, respectively. The result does not only demonstrate the high sensitivity monolithic photoreceiver but indicates the potential of the selective-area epitaxy technique in the development of WBG-based short wavelength integrated devices.

Published in:

IEEE Sensors Journal  (Volume:9 ,  Issue: 8 )