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Fabrication and Characterization of Epitaxial NbN/TaN/NbN Josephson Junctions Grown by Pulsed Laser Ablation

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4 Author(s)
Nevala, M.R. ; Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland ; Maasilta, I.J. ; Senapati, K. ; Budhani, R.C.

We report fabrication and characterization of epitaxial NbN/TaN/NbN Josephson junctions grown by pulsed laser ablation. These SNS junctions can be used as elements of rapid-single-flux-quantum (RSFQ) logic, which is a promising technology for high speed digital electronic devices. The NbN/TaN/NbN trilayer films were prepared on a single crystal MgO substrate by pulsed laser ablation, and patterned into junctions using a novel process utilizing e-beam lithography, chemical vapor deposition and e-beam evaporation. The quality of junctions was tested by measuring the temperature dependence of the junctions' IcRn values, observed to be quite close to theoretical values.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:19 ,  Issue: 3 )