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Growth of {\rm BaSnO}_{3} Doped {\rm ErBa}_{2}{\rm Cu}_{3}{\rm O}_{7-\delta } Thin Films on MgO Substrates for High {mmb J}_{\bf C} Applications

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9 Author(s)
Mukaida, M. ; Kyushu Univ., Fukuoka, Japan ; Yasunaga, S. ; Teranishi, R. ; Mori, N.
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We compared J C properties of i) Pure ErBa2Cu3O7-delta films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-delta films on SrTiO3 substrates, iii) BaSnO3 doped ErBa2Cu3O7-delta films on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O7-delta films on BaSnO3 buffered MgO substrates. The lowest J C was obtained from pure ErBa2Cu3O7-delta films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-delta films on BaSnO3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest J C was obtained from BaSnO3 doped ErBa2Cu3O7-delta films on SrTiO3 substrates. Almost the same J C was obtained from BaSnO3 doped ErBa2Cu3O7-delta films on BaSnO3 buffered MgO substrates. 2 wt% BaSnO3 doping into ErBa2Cu3O7-delta films on BaSnO3 buffered MgO substrates are very effective to enhance J C S of the films at a high magnetic field.

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Applied Superconductivity, IEEE Transactions on  (Volume:19 ,  Issue: 3 )