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Differential Hall measurement and secondary ion mass spectrometry have been used to characterize the influences of room temperature Si implantation and annealing on the electrical properties of n‐layers formed by direct implantation into liquid‐encapsulated‐Czochralski grown, Fe‐doped InP substrates. The Si activation is affected by the background Fe level. The anneal‐time influenced the electron mobility near the channel‐substrate interface. Mobility degradation at the interface, present with customary anneal, could be avoided using long time anneal. The mobility changes have been correlated with the changes in the Fe distribution near the interface. The customary anneal‐time introduced an Fe accumulation behind Rm, the maximum of the Si profile, followed by an Fe depletion. However, after long time anneals an Fe depletion was created between the Rm and Rm+2dRp of the Si profile and the Fe accumulation shifted behind Rm+2dRp.