By Topic

SnTe‐doping of GaAs grown by atomic layer molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Kuball, M. ; Max‐Planck‐Institut für Festkörperforschung, Heisenbergstrasse 1, D‐70569 Stuttgart, Germany ; Cardona, M. ; Mazuelas, A. ; Ploog, K.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Using x‐ray diffraction and ellipsometry we have studied the incorporation process of SnTe in GaAs for n‐type doping. Combining these two techniques allows us to decide whether SnTe is incorporated pairwise, as has been proposed in the literature. We found SnTe doping to change the E1 and E11 critical point parameters in a way similar to that previously reported for n‐type Si‐doped GaAs. X‐ray diffraction and Hall measurements show that the free carrier concentration is more than 1/2 of the [Sn]+[Te] concentration. We thus conclude that a large proportion of SnTe is incorporated as independent Sn and Te dopant atoms. © 1995 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 9 )