By Topic

Sputter‐induced grain boundary junctions in YBa2Cu3O7-x thin films on MgO

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Vuchic, B.V. ; Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 ; Merkle, K.L. ; Dean, K.A. ; Buchholz, D.B.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre‐sputtered region of MgO was rotated 45° about the [001] axis relative to the YBa2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current‐voltage and resistance‐temperature characteristics of individual grain boundary junctions demonstrated weak‐link‐type behavior. Sputter‐induced 45° grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 6 )