Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments

New experiments on short‐time diffusion of gold in silicon are presented. By means of both our experiments and experiments published elsewhere, diffusion of gold in silicon is investigated in the temperature range of 900 °C to 1100 °C. A complete set of parameters is determined from these experiments using Arrhenius’ law. It is found that the short‐time diffusion experiments cannot be simulated without barrier energies for both the gold‐point defect reactions and the Frenkel pair reaction. Their values have been determined as EAu/I=0.482 eV, EAuI/V=0.971 eV, and EI/V=0.30 eV. © 1995 American Institute of Physics.