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Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H‐SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 °C and yielded values ≪5×10-6 Ω cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. © 1995 American Institute of Physics.