By Topic

Comparison of the radiation resistance of electron irradiated indium phosphide grown by metal‐organic chemical‐vapor deposition and liquid encapsulated Czochralski

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Thomas, H. ; School of Electrical, Electronic and Systems Engineering, University of Wales, College of Cardiff, United Kingdom ; Luo, J.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.359047 

Electrical characterization has been carried out on electron irradiated InP grown by metal‐organic chemical‐vapor deposition (MOCVD) and liquid encapsulated Czochralski (LEC), through I–V (–T), C–V, deep level transient spectroscopy (DLTS) and admittance spectroscopy measurements and the resistance to electron radiation for these two materials has been compared. It was found that MOCVD‐InP was more resistant to electron radiation than LEC‐InP, as demonstrated by the lower carrier removal rate and change of series resistance in the MOCVD‐InP diodes as a result of electron radiation. The introduction rates for the dominant hole defects H3 and H4 and for additional electron defect states were found to be similar for both materials, but were insufficient to explain the degree of degradation of solar cell efficiency incurred by these known defects. A new defect, HD1, has been found to be responsible for the high carrier removal rate and the introduction of a large series resistance which accounts for the difference of radiation hardness between these two materials. The results again show that the dominant irradiation defects in InP are not the defects H3 and H4 as is usually accepted, but the new found defect HD1, which was undetected by the DLTS technique. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 2 )