By Topic

Scanning tunneling microscope with gallium arsenide microtip fabricated by selective epitaxial growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yamaguchi, Koichi ; Department of Electronic Engineering, University of Electro‐Communications, 1‐5‐1, Chofugaoka, Chofu‐shi, Tokyo 182, Japan ; Okamoto, Kotaro ; Yugo, Shigemi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

GaAs microtip for scanning tunneling microscope was fabricated by selective metalorganic chemical vapor deposition. The GaAs tip was constructed by two {111}B growth facets and a cleaved (110) surface. The surface of the GaAs tip was treated by ammonium sulfide solution, and highly oriented pyrolytic graphite surfaces were observed by using the GaAs tip in air. As the result, imagings of the atomic arrangement could be successfully obtained. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 11 )