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Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP

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3 Author(s)
Peiro, F. ; LCMM. Departament Física Aplicada i Electrònica, Diagonal 645‐647, 08028 Barcelona, Spain ; Cornet, A. ; Morante, J.R.

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The morphology of compressive InxGa1-xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm≪tc≪25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 10 )

Date of Publication:

May 1995

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