Cart (Loading....) | Create Account
Close category search window

Electric‐field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Huang, Yimin ; Department of Electronics Engineering and the Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 30039, Republic of China ; Wang, Junfu ; Chenhsin Lien

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A 1.3 μm modulator using light‐hole–to‐electron interband Stark shift in the lattice‐matched AlInAs/GaInAs coupled quantum wells (CQWs) is investigated theoretically. The operation of this device is based on the lowest‐energy absorption resonance corresponding to the first light‐hole–to–electron transition (ELh1→Ee1). The resonant nature of this process results in a sharp absorption peak when the incident photon energy is equal to the energy‐level separation. This device utilizes the significant enhancement of the Stark effect on the electronic states and the strong field‐dependence transition dipole moments. Under an applied electric field, the energy spacing between ELh1 and Ee1 changes due to the Stark shift. The contrast ratio can be improved from 8:1 for the symmetric CQW to as high as 20:1 for the proposed asymmetric CQW structure. These contrast ratios are achieved by varying the applied electric field in the 0–70 kV/cm range. This large variation of optical absorption at 1.3 μm is obtained both by the enhanced Stark shift and by varying the overlap between the hole and electron envelope wave functions with an applied electric field and Stark effect for the proposed AlInAs/GaInAs CQW system. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:77 ,  Issue: 1 )

Date of Publication:

Jan 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.