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A closed-form physical back-gate-bias dependent quasi-saturation model for SOI lateral DMOS devices with self-heating for circuit simulation

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3 Author(s)
Liu, C.M. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Shone, F.C. ; Kuo, J.B.

This paper reports a closed-form physical back-gate-bias dependent quasi-saturation model for silicon-direct-bonded lateral SOI DMOS devices with self-heating. By solving Poisson's equation in the substrate direction with the thermal equation, a closed-form physical SOI DMOS quasi-saturation model considering lattice temperature suitable for circuit simulation has been derived. Based on the analytical model, the surface state above the field oxide may effectively decrease the back gate bias effect on the quasi-saturation behavior in the SOI DMOS device. With a more negative back gate bias, the thermal effect on quasi-saturation is less influential

Published in:

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Date of Conference:

23-25 May 1995