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The structural, electrical, and piezoresistive properties of in situ boron‐doped thin silicon layers deposited by plasma‐enhanced chemical‐vapor deposition at 320 °C on oxidized silicon substrates and subjected to a rapid thermal anneal (1100 °C for 20 s) have been investigated. Macroscopic electrical parameters derived from resistivity and Hall‐effect measurements were compared to microscopic characteristics deduced from optical data to explain the low‐temperature coefficients of resistance measured on this polycrystalline material. Finally, the piezoresistivity gauge factors of these heavily doped layers are discussed in view of their internal stress state and of other structural characteristics.