Referenced Items are not available for this document.
A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The model accounts for the enhanced carrier modulation in the drift base due to the PIN diode effect. The on-state phenomena in the TIGBT are accurately described using numerical simulations and analytical modeling. The PIN diode effect has a very important role in reducing the on-state forward voltage with virtually no compromise in the turn-off performance. It is concluded that the TIGBT is the most promising power structure in the area of high voltage or/and fast switching devices
Published in:
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Date of Conference: 23-25 May 1995
- Page(s):
- 190 - 195
- Meeting Date :
- 23 May 1995-25 May 1995
- ISSN :
- 1063-6854
- Print ISBN:
- 0-7803-2618-0
- INSPEC Accession Number:
- 5188340
- Conference Location :
- Yokohama
- Digital Object Identifier :
- 10.1109/ISPSD.1995.515033
- Product Type:
- Conference Publications
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