By Topic

A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Udrea, F. ; Dept. of Eng., Cambridge Univ., UK ; Amaratunga, G.

A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The model accounts for the enhanced carrier modulation in the drift base due to the PIN diode effect. The on-state phenomena in the TIGBT are accurately described using numerical simulations and analytical modeling. The PIN diode effect has a very important role in reducing the on-state forward voltage with virtually no compromise in the turn-off performance. It is concluded that the TIGBT is the most promising power structure in the area of high voltage or/and fast switching devices

Published in:

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Date of Conference:

23-25 May 1995