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How the flow of the silicon melt affects Czochralski crystal growth in terms of nonlinear forecasts about the time series of striations of as‐grown crystals and the melt temperature fluctuations beneath the crystal is investigated. The melt exhibits nonstationary self‐affine random motion added to regular motion. The random contribution becomes dominant toward the center of the crucible. Such dynamical properties of the melt are found to be embedded into the striations.