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Growth of CuO films by pulsed laser deposition in conjunction with a pulsed oxidation source

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4 Author(s)
Willmott, P.R. ; Physikalisch‐Chemisches Institut der Universität Zürich, Winterthurerstrasse 190, CH‐8057 Zürich, Switzerland ; Timm, R. ; Felder, P. ; Huber, J.R.

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Copper (II) oxide films of high chemical and crystal purity have been grown on MgO(100) substrates using pulsed laser ablation (248 nm) of copper in conjunction with a pulsed oxidizing gas source (N2O). A novel experimental geometry is presented, in which the gas pulse and ablation plume cross close to their respective origins, where the particle and energy densities are highest. The properties of the films have been analyzed by x‐ray diffraction and scanning electron microscopy. Growth rates are typically 0.025–0.035 Å/laser pulse within the substrate temperature region of 50 to 600 °C. Results in the region of 350 °C are presented. Analysis by time‐of‐flight mass spectroscopy has identified the predominant gas‐phase species during ablation and transportation to the growing surface.

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 5 )