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Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells

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3 Author(s)
Cheng, J.‐P. ; Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 ; Lo, Ikai ; Mitchell, W.C.

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Far‐infrared magneto‐optical spectroscopy has been used to investigate the negative persistent photoconductivity (NPPC) effect in InAs/Al0.5Ga0.5Sb quantum wells at low temperatures. After an in situ cross‐gap illumination, the electron density in the InAs well is reduced by about 28%, and the cyclotron effective mass decreases from (0.0342±0.0002)m0 to (0.0322±0.0002)m0. The time scale for the NPPC buildup transient determined from the results of a photon‐dose experiment is on the order of 10 ms with an illumination power flux of ∼10 mW/cm2.

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 2 )

Date of Publication:

Jul 1994

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