Cart (Loading....) | Create Account
Close category search window
 

Characterization of Czochralski‐ and hydrothermal‐grown Bi12SiO20

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Leigh, W.B. ; Division of Electrical Engineering, Alfred University, Alfred, New York 14802 ; Larkin, J.J. ; Harris, M.T. ; Brown, R.N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.357808 

An investigation was made of the defect characteristics of single‐crystal Bi12SiO20 (BSO) grown by both Czochralski (Cz) and hydrothermal transport methods. Only Cz‐grown BSO is photorefracting using a coherent pumping source centered around 500 nm, as undoped hydrothermal BSO is transparent throughout the visible spectrum. Thermally stimulated current (TSC) studies in conjunction with temperature‐dependent optical‐absorption measurements and room‐temperature photoconductivity data all indicate that the hydrothermal material is near intrinsic in terms of its low defect content. TSC measurements made below room temperature indicate that concentrations of traps of activation energy ≪0.7 eV are a factor of 103 smaller in hydrothermal than in Cz BSO. At least six different defects were identified in the TSC measurements. Temperature‐dependent optical‐absorption measurements indicate two Urbach band tails for Cz‐grown materials that are not observed in the hydrothermal materials. Cz material of lower purity also possesses an impurity band tail which can be observed through temperature dependent optical absorption measurements. Comparison of Cz material with hydrothermal BSO of similar impurity content suggests that the BiSi defect responsible for the 500 nm absorption may be complexed with an impurity such as Fe or V. In the absence of this defect, however, these impurities have no effect on the absorption. An additional defect in the TSC data is also related to a transition metal impurity. The results indicate that the photoconductivity associated with the photorefractive effect in Cz material must proceed via a trap‐hopping conduction mechanism that is missing in the intrinsic material.

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 2 )

Date of Publication:

Jul 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.