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Optical pulse mixing measurement of carrier lifetime and absorption recovery time in reverse‐biased GaAs/AlGaAs single quantum well laser structures

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4 Author(s)
Brovelli, L.R. ; Swiss Federal Institute of Technology Zurich, Institute of Quantum Electronics, CH‐8093 Zurich, Switzerland ; Hugi, J. ; Jackel, H. ; Melchior, H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.357945 

We describe an optical pulse mixing experiment with a two‐segment GaAs/AlGaAs single quantum well, graded‐index separate confinement heterostructure laser to determine the effective lifetime of photogenerated carriers in a short reverse‐biased segment with subpicosecond resolution. This lifetime is of importance if such a segment is used as a fast photodetector or as a saturable absorber in a monolithic mode‐locked laser structure. We found that the lifetime depends not only on the applied bias but also on the excitation pulse energy. Lifetimes shorter than 5 ps have been observed. The strong dependence on excitation pulse energy is attributed to screening effects of the escaped carriers. A simple model based on an exact solution of the one‐dimensional Schrödinger equation for a particle in a quantum well in an electric field together with an electrical equivalent circuit verifies this assumption. © 1994 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 12 )

Date of Publication:

Dec 1994

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