Cart (Loading....) | Create Account
Close category search window

Optical pulse mixing measurement of carrier lifetime and absorption recovery time in reverse‐biased GaAs/AlGaAs single quantum well laser structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Brovelli, L.R. ; Swiss Federal Institute of Technology Zurich, Institute of Quantum Electronics, CH‐8093 Zurich, Switzerland ; Hugi, J. ; Jackel, H. ; Melchior, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We describe an optical pulse mixing experiment with a two‐segment GaAs/AlGaAs single quantum well, graded‐index separate confinement heterostructure laser to determine the effective lifetime of photogenerated carriers in a short reverse‐biased segment with subpicosecond resolution. This lifetime is of importance if such a segment is used as a fast photodetector or as a saturable absorber in a monolithic mode‐locked laser structure. We found that the lifetime depends not only on the applied bias but also on the excitation pulse energy. Lifetimes shorter than 5 ps have been observed. The strong dependence on excitation pulse energy is attributed to screening effects of the escaped carriers. A simple model based on an exact solution of the one‐dimensional Schrödinger equation for a particle in a quantum well in an electric field together with an electrical equivalent circuit verifies this assumption. © 1994 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 12 )

Date of Publication:

Dec 1994

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.