Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.357958
Far‐infrared absorption has been investigated in n‐type Czochralski‐grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm-1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited‐state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective‐mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:76
,
Issue:
11
)
Date of Publication: Dec 1994
- Page(s):
- 7347 - 7350
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.357958
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Dec 1994
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
