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Far‐infrared absorption has been investigated in n‐type Czochralski‐grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200–330 cm-1 are observed upon postirradiation annealing of the crystals at 300–550 °C. These bands are associated with ground–to–excited‐state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective‐mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.