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Atomic structure of Si/TbSi2/(111)Si double‐heterostructure interfaces

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3 Author(s)
Luo, C.H. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Chen, F.R. ; Chen, L.J.

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High‐resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double‐heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained‐coincidence‐site‐lattice patterns. The atomic structures were determined by comparing HRTEM images with computer‐simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 10 )