Cart (Loading....) | Create Account
Close category search window

Computer simulations of pore growth in silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Erlebacher, J. ; Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 ; Sieradzki, K. ; Searson, P.C.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The dynamics of pore formation in silicon was studied by computer simulation. Porous structures were generated by a Monte Carlo algorithm that controlled the motion of an ensemble of electronic holes on a two‐dimensional square lattice. Hole motion was biased to the nearest pore tip in order to simulate local electric‐field effects corresponding to the depletion layer setup in n‐type silicon. Several morphological characteristics seen in porous silicon were seen in the simulation: highly directional pores, steady‐state pore spacing, and a smooth pore front. The pore spacing and the degree of sidebranching depended on the concentration of holes and the magnitude of the bias. The simulation trends are analogous to the pore morphologies seen in n‐type silicon.

Published in:

Journal of Applied Physics  (Volume:76 ,  Issue: 1 )

Date of Publication:

Jul 1994

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.