Photodetachment and ion mobility measurements are reported confirming the efficient H- formation in UV‐laser‐irradiated H2 reported earlier [L. A. Pinnaduwage and L. G. Christophorou, Phys. Rev. Lett. 70, 754 (1993)]. The implications of the efficienct H- formation in UV‐laser‐irradiated H2 (and other types of negative ions in UV‐laser‐irradiated gases) for negative ion and neutral particle beam technologies are discussed. Also, the possible contribution to H- formation in H2 discharge sources from electron attachment to high‐lying electronically excited states of H2 is indicated.