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Semi‐insulating Fe‐doped 〈100〉‐InP wafers were implanted in a nonchanneling direction with 300 keV Si+ and 600 keV Se++ ions in the dose range of 1×1012–1×1016 cm-2. The implantation temperature was varied between room temperature and 425 K. The samples were capped and short time annealed by means of a graphite strip heater at 700–975 °C. The defect investigation of the as‐implanted as well as of the annealed samples was performed with Rutherford backscattering spectrometry. A simple vacancy diffusion model is applied to describe the damage production, which yields critical implantation temperatures for amorphization. These temperatures are approximately 390 K for Si and 420 K for Se, for higher temperatures amorphization is not possible in InP. The electrical properties of the annealed layers are measured by the van der Pauw–Hall technique. The results are discussed with respect to the residual damage after annealing. Saturation values of the electrical activation were achieved at 3×1014 cm-2 for Si and 4×1014 cm-2 for Se, respectively.