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A combination calorimetric and ionization x‐ray detector has been made by attaching a silicon p‐i‐n diode to a monolithic silicon microcalorimeter. We were able to measure a charge signal in the absence of applied bias on the diode at a temperature as low as 0.1 K, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron‐hole pairs created became trapped, as was manifested by excess broadening in the measured thermal signal. The fraction of charge trapped was determined from the variation of the thermal signal magnitude with reverse bias. The ability to collect charge without applying a bias is an encouraging result in the development of high resolution combination thermal and ionization detectors. At higher biases high resolution is precluded, but the enhancement of the thermal signal due to the work done on the ionized charges can lead to a low detection threshold. With an applied bias of -25 V, we achieved a detection threshold of 8 eV, based upon energy scaling of the 1σ value of the baseline noise distribution.