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Temperature dependent electron‐beam‐induced‐current investigation of electronic damages in silicon due to reactive ion etching

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4 Author(s)
Jager‐Waldau, G. ; Max‐Planck‐Institut für Festkörperforschung, Postfach 800665, 70506 Stuttgart, Germany ; Habermeier, H.-U. ; Zwicker, G. ; Bucher, E.

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The damage introduced by reactive ion etching in silicon was investigated by the planar‐electron‐beam‐induced‐current (PEBIC) method. A reduction of the EBIC signal in the etched areas is detected and studied of temperature dependency in the range of 5 K≪T≪300 K. The EBIC contrast between etched and unetched areas increases with decreasing temperature. Our results are interpreted by a reduction of the net acceptor dopant impurity near the etched surface.

Published in:

Journal of Applied Physics  (Volume:75 ,  Issue: 2 )