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The damage introduced by reactive ion etching in silicon was investigated by the planar‐electron‐beam‐induced‐current (PEBIC) method. A reduction of the EBIC signal in the etched areas is detected and studied of temperature dependency in the range of 5 K≪T≪300 K. The EBIC contrast between etched and unetched areas increases with decreasing temperature. Our results are interpreted by a reduction of the net acceptor dopant impurity near the etched surface.