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A new method for determining band‐gap energies using modulation spectroscopy is described. In contrast to the usual method for extracting transition energies from modulation spectra, which assumes a constant electric field distribution, this method pertains to cases where an inhomogeneous field exists. The band‐gap determination applied herein to GaAs epilayers between 100 and 380 K takes advantage of a modulation feature arising from an inhomogeneous distribution of the electric field. This approach is quick, applicable over a wide temperature range, and does not necessitate curve fitting.