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A simple method for determining band‐gap energies from inhomogeneous electric field electroreflection spectra applied to GaAs

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4 Author(s)
Poras, H. ; Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167 ; Wang, H. ; Goldsmith, G.J. ; Pan, N.

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A new method for determining band‐gap energies using modulation spectroscopy is described. In contrast to the usual method for extracting transition energies from modulation spectra, which assumes a constant electric field distribution, this method pertains to cases where an inhomogeneous field exists. The band‐gap determination applied herein to GaAs epilayers between 100 and 380 K takes advantage of a modulation feature arising from an inhomogeneous distribution of the electric field. This approach is quick, applicable over a wide temperature range, and does not necessitate curve fitting.

Published in:

Journal of Applied Physics  (Volume:75 ,  Issue: 12 )