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The chemical oxidation of hydrogen‐terminated silicon (111) surfaces in water studied in situ with Fourier transform infrared spectroscopy

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4 Author(s)
Boonekamp, E.P. ; Debye Research Institute, Department of Condensed Matter, University of Utrecht, P.O. Box 80 000, 3508 TA Utrecht, The Netherlands ; Kelly, J.J. ; van de Ven, J. ; Sondag, A.H.M.

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The chemical oxidation of hydrogen‐terminated silicon (111) surfaces in water was studied in situ with Fourier transform IR spectroscopy in the multiple total internal reflection mode. On the basis of measurements of the absorbance of the Si‐H and Si‐O‐Si vibrations as a function of time it is concluded that reactions involving the oxidation of silicon hydride and the formation of silicon oxide are coupled. The decrease in the hydride coverage and increase in the oxide coverage are linear functions of ln(t). The time dependence of oxide growth is explained in terms of electrostatic and mechanical changes at the Si/water interface.

Published in:

Journal of Applied Physics  (Volume:75 ,  Issue: 12 )