This paper describes a model which can predict the quantity and lateral distribution of hot‐electron‐induced interface states in Si metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). The results are obtained using an advanced Monte Carlo method, which incorporates two lowest conduction energy bands from pseudopotential calculations, coupled with an interface state generation model. The coupled model simulates transport‐induced hot electron emission from Si into SiO2 and the subsequent generation of interface states in MOSFETs operating under realistic high‐voltage stress conditions. The calculations explore the sensitivity of the channel electron energy distribution to various Monte Carlo parameters, such as impact ionization coefficients, self‐consistent electron‐electron interactions, and surface scattering. Within the validity of our treatments of these physical phenomena, it is shown that while the effects of Monte Carlo parameters on the energy distribution can result in uncertainties in the net interface state generation, quantitative studies may be allowed by using scaling principles. The interface state distribution obtained from the model agrees with experimental data from charge pumping measurements. The model also predicts that the interface state generation extends spatially beyond the range which is accessible by the charge pumping measurements.