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Radiation‐induced segregation of nitrogen implanted into iron

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7 Author(s)
Jagielski, J. ; Institute for Electronic Materials Technology, Wólczynska 133, 01‐919 Warsaw, Poland ; Moncoffre, N. ; Marest, G. ; Thome, L.
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Nitrogen redistribution toward the sample surface during the implantation processes performed at temperatures ranging from room temperature to 250 °C was studied for pure iron by means of nuclear reaction analysis and secondary‐ion‐mass spectrometry. The role of carbon and radiation defects was investigated. The results reveal the importance of radiation defects on nitrogen migration and trapping. The migration mechanism was identified as a radiation‐induced segregation.

Published in:

Journal of Applied Physics  (Volume:75 ,  Issue: 1 )