By Topic

Observation of surface charge screening and Fermi level pinning on a synthetic, boron‐doped diamond

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.354445 

Spectroscopic current‐voltage (I‐V) curves taken with a scanning tunneling microscope on a synthetic, boron‐doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I‐V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I‐V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].

Published in:

Journal of Applied Physics  (Volume:74 ,  Issue: 6 )