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Real‐time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room‐temperature measurements on polycrystalline films corroborate previous post‐growth measurements. Our high‐temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.