By Topic

Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Meng, W.J. ; Physics Department, General Motors Research and Development Center, Warren, Michigan 48090 ; Sell, J.A. ; Eesley, G.L. ; Perry, T.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.354701 

Real‐time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room‐temperature measurements on polycrystalline films corroborate previous post‐growth measurements. Our high‐temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.

Published in:

Journal of Applied Physics  (Volume:74 ,  Issue: 4 )