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Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects in n‐type germanium

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3 Author(s)
Marie, P. ; Laboratoire d’Etudes et de Recherches sur les Materiaux, URA No. 1317, ISMRa, 6 Boulevard du Maréchal Juin, 14050 CAEN Cedex, France ; Levalois, M. ; Bogdanski, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.354879 

Swift heavy ion irradiation‐induced defects have been studied in n‐type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at Ec-0.22, Ec-0.275, Ec-0.29, Ec-0.32, and Ec-0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.

Published in:

Journal of Applied Physics  (Volume:74 ,  Issue: 2 )

Date of Publication:

Jul 1993

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