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The fixed‐point iteration method is extended to the finite element solution of the nonlinear Poisson equation of semiconductor devices. The boundary value problem is derived and shown to have a global convergence. In addition, using explicit formulas to update the value of the electrostatic potential, the solution of simultaneous equations is avoided. A numerical example of a metal‐oxide‐semiconductor field‐effect transistor at thermal equilibrium is presented.
Published in:
Journal of Applied Physics
(Volume:74
,
Issue:
10
)
Date of Publication: Nov 1993
- Page(s):
- 6186 - 6190
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.355187
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Nov 1993
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