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Surface and bulk traps along with positive oxide charge accumulation have been found to be generated in metal‐oxide‐semiconductor capacitors, when subjected to negative air corona discharge at slightly reduced pressure (≂10-1 Torr). The effects are neutralized and device quality improved when annealed at 200 °C in air. The bulk traps and a fraction of oxide charges were annealable when kept at room temperature for several months. The results have been analyzed by Nicollian–Goetzberger’s conductance technique and a plausible explanation is given.