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Photopumped laser action in a HgCdTe double‐heterostructure grown by metalorganic chemical vapor deposition on a CdTe substrate containing (311)‐ and (211)‐oriented grains was studied. The (311)‐oriented device exhibited laser action around λ=4 μm with a threshold power increasing exponentially from 56 mW at T=12 K to 2.8 W at the highest lasing temperature of 90 K. The (211)‐oriented laser device emitted around 2.5 μm. The threshold power of the (211) device was much higher than that of the (311) one (1.5 W at 12 K) and increased with temperature at a lower rate to 4.8 W at the highest lasing temperature of 110 K. Front illumination photoluminescence from both active and cladding layers of the (311)‐oriented heterostructure was studied as a function of temperature.