By Topic

Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Marcinkevicius, S. ; Institute of Optical Research and Department of Physics II, Royal Institute of Technology, S‐100 44 Stockholm, Sweden ; Olin, U. ; Ottosson, M. ; Treideris, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.352767 

The Stark shift of the ground interband transitions has been studied by means of room temperature photoluminescence in asymmetric step InGaAs/GaAs quantum wells with different step widths. The shift magnitude is found to increase with increasing step width. It is shown that by a proper design of the well profile the Stark shift in the asymmetric step quantum well may be increased nearly twice as compared to the rectangular well of the same width.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 9 )