By Topic

Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tarsa, E.J. ; Materials Department, University of California, Santa Barbara, California 93106 ; De Graef, M. ; Clarke, D.R. ; Gossard, A.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effects of substrate preparation on the structure and orientation of MgO films grown on (001) GaAs using pulsed laser deposition has been investigated. Textured MgO films displaying a (111)MgO‖(001)GaAs orientation relation with x‐ray rocking curve full width at half maximum (FWHM) values as low as 1.8° were obtained in cases where the native GaAs surface oxide was only partially desorbed prior to growth. Reflection high‐energy electron diffraction, transmission electron microscopy (TEM), and x‐ray pole figure analysis of these films reveals a preferential orientation within the plane of the substrate: [11¯0]MgO‖[11¯0]GaAs and [112¯]MgO‖[110]GaAs. An interfacial layer (∼5 nm thick) was observed in high resolution TEM analysis, and was attributed to a remnant native GaAs oxide layer. Complete desorption of the native GaAs oxide at ∼600 °C in vacuum prior to MgO growth led to significant surface roughening due to Langmuir evaporation, and resulted in randomly oriented polycrystalline MgO films. Growth of MgO on Sb‐passivated GaAs substrates, which provided smooth, reconstructed surfaces when heated to 350 °C in vacuum, resulted in cube‐on‐cube oriented films [i.e., (001)MgO‖(001)GaAs,[100]MgO‖[100]GaAs] with x‐ray rocking curve FWHM values as low as 0.47°. TEM analysis of the cube‐on‐cube oriented films revealed evidence of localized strain fields at the MgO/GaAs interface, indicating the presence of misfit dislocations in the MgO layer.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 7 )