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Strain determination in InxGa1-xAs/GaAs strained‐layer superlattices by photomodulated reflectance

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4 Author(s)
Inoki, C.K. ; Instituto de Física, Universidade Estadual de Campinas, 13081‐970 Campinas, SP, Brazil ; Lemos, V. ; Cerdeira, F. ; Vasquez‐Lopez, C.

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A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained‐layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E11 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in‐plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 7 )