Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.352969
We present results on the growth and shrinkage of oxidation stacking faults in silicon implanted with oxygen (SIMOX) structures and compare them with bulk silicon. The growth results show an enhanced length of the faults in SIMOX. Using the silicon direct bonding technique, we determine the critical silicon film thickness for which the length of the faults becomes the same as in bulk silicon. The shrinkage behavior of the faults during annealing in inert ambient was also studied and similar results for both materials were obtained. From these experiments we get insight into the fundamental properties of silicon self‐interstitials.