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A slow positron beam study of vacancy formation in fluorine‐implanted silicon

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2 Author(s)
Fujinami, M. ; Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara‐ku, Kawasaki, Japan ; Chilton, N.B.

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The subsurface vacancy profile in Czochralski (Cz) Si(100) implanted to a dose of 2×1014 cm-2 with 120 keV fluorine ions has been determined using a slow positron beam. The unique sensitivity of the positron technique to vacancy concentrations of part per million (ppm) order is utilized. We demonstrate the presence of vacancies at ppm concentrations at depths up to 1 μm greater than the depth predicted by Monte Carlo modeling. The vacancies caused by the implantation process are suggested to consist of an immobile and a mobile component, the latter component being able to diffuse to such depths.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 7 )