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Collection efficiency of photoexcited carriers of electrochemically etched surface

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3 Author(s)
Nabutovsky, V.M. ; The Weizmann Institute of Science, Department of Materials and Interfaces, Rehovot 76100, Israel ; Eherman, K. ; Tenne, R.

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The collection efficiency of a photoexcited layered type semiconductor WSe2 exhibits appreciable gain, especially in the near infrared region, following photoetching. A theoretical model, which considers surfaces that are inclined in an oblique angle with respect to the incident light, and that also considers the anisotropic diffusion length in this material, was proposed. The theory explains the large gain in the infrared region (up to 4–5 times after photoetching) and small gain in the shorter wavelengths by ‘‘crossover’’ from carriers diffusion mainly along the layers (⊥c) in the first case to diffusion mainly along the c axes in the second case. From the fit to experimental data, it was found that the diffusion length transverse to the layers (‖c) is 2–2.5 μm whereas the diffusion length in the plane of layers (⊥c) is 9–11 μm.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 6 )