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Sectional structures and electrical properties of ultrathin NbN/MgO bilayers on Si(100)

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3 Author(s)
Ishiguro, Takashi ; Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940‐21, Japan ; Matsushima, Kazuo ; Hamasaki, K.

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NbN/MgO bilayers deposited on Si(100) substrates by rf‐sputtering were studied using cross‐sectional transmission electron microscopy (XTEM). The XTEM results reveal that the 10‐nm‐thick MgO layer forms two layers of different structures, i.e., an amorphous layer (∼4 nm) and a highly (100) oriented polycrystalline layer (∼6 nm). We also found that the structure of MgO underlayers exhibits a strong effect on Tc of on‐deposited NbN layers.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 3 )

Date of Publication:

Feb 1993

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