Cart (Loading....) | Create Account
Close category search window
 

Sectional structures and electrical properties of ultrathin NbN/MgO bilayers on Si(100)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ishiguro, Takashi ; Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940‐21, Japan ; Matsushima, Kazuo ; Hamasaki, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.353281 

NbN/MgO bilayers deposited on Si(100) substrates by rf‐sputtering were studied using cross‐sectional transmission electron microscopy (XTEM). The XTEM results reveal that the 10‐nm‐thick MgO layer forms two layers of different structures, i.e., an amorphous layer (∼4 nm) and a highly (100) oriented polycrystalline layer (∼6 nm). We also found that the structure of MgO underlayers exhibits a strong effect on Tc of on‐deposited NbN layers.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 3 )

Date of Publication:

Feb 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.