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Observation of activation of Li atoms in ZnSe by photoluminescence

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3 Author(s)
Zhu, Ziqiang ; Department of Electrical Engineering, Hiroshima University, Higashi‐Hiroshima 724, Japan ; Mori, Hiroshi ; Yao, Takafumi

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This article reports on the photoluminescence study of activation of a Li dopant in ZnSe films. It has been found that the amphoteric role of the Li dopant is strongly influenced by annealing or substrate temperature. The temperature ranges for efficient activation of Li are estimated to be 430–460 °C in the annealing experiment and 280–350 °C in the thermal diffusion experiment. The correlation of emission intensities between acceptor‐bound exciton (I1), donor‐bound exciton (I2), and donor‐acceptor pair (DAP Q0) is described in detail. As the Li acceptor increases, the emission intensities of both I1 and DAP increase, which leads to the decrease in the emission intensity of I2.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 3 )

Date of Publication:

Feb 1993

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