Cart (Loading....) | Create Account
Close category search window

Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Stahlbush, R.E. ; Naval Research Laboratory, Washington, DC 20375 ; Edwards, A.H. ; Griscom, D.L. ; Mrstik, B.J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Molecular hydrogen is alternately introduced into and removed from the gate oxide of irradiated metal‐oxide‐semiconductor field‐effect transistors at room temperature by changing the ambient between forming gas (10/90% H2/N2) and nitrogen. Using charge pumping, it is observed that H2 causes a simultaneous buildup of interface states and decrease of trapped positive charge. The results are explained by a reaction sequence in which H2 is cracked to form mobile H+, which under positive bias drifts to the Si/SiO2 interface, and reacts to produce a dangling‐bond defect. The rate limiting step over most of the time domain studied is the cracking process. Two types of cracking sites are modeled by molecular orbital calculations: oxygen vacancies (E’ centers) and broken bond hole traps (BBHTs). Initial‐ and final‐state energies, as well as the activation energies, are calculated. The calculations indicate that the latter is the more likely H2 cracking site. The combined experimental and theoretical results suggest that at least 15% of the trapped positive charge is at sites similar to the BBHT sites. Implications of the model and similarities between interface‐state formation by cracked H2 and irradiation are discussed.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 2 )

Date of Publication:

Jan 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.