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The lattice locations of silicon atoms in delta‐doped layers in GaAs

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8 Author(s)
Ashwin, M.J. ; Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom ; Fahy, M. ; Harris, J.J. ; Newman, R.C.
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We have used secondary ion mass spectrometry, local vibrational mode infrared absorption, and electrical characterization to study the incorporation of Si delta‐doped planes in GaAs grown by molecular beam epitaxy at 400 °C, in the concentration range 0.01–0.5 monolayers. A correspondence is observed between the density of SiGa donors, the free electron concentration and the total Si coverage, up to a coverage of ∼1013 cm-2; however, above this value, the electron density falls, while [SiGa] remains constant up to a coverage of ∼1014 cm-2, and then falls below the detection limit at 0.5 monolayer coverage. These effects have been interpreted in terms of a model which takes account of Si migration and aggregation on the delta‐doped plane during deposition.  

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 2 )

Date of Publication:

Jan 1993

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